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A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY

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dc.citation.epageL1205en_US
dc.citation.issue9Aen_US
dc.citation.spageL1203en_US
dc.citation.volume32en_US
dc.citation.woscount1
dc.contributor.authorCHOU, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorHO, LTen_US
dc.contributor.authorKO, Jen_US
dc.contributor.authorHSUE, Pen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:04:23Z
dc.date.available2014-12-08T15:04:23Z
dc.date.issued1993-09-01en_US
dc.description.abstractA new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2891
dc.identifier.wosnumberWOS:A1993LX13300007
dc.language.isoen_USen_US
dc.subjectDRAIN ENGINEERINGen_US
dc.subjectLIGHTLY DOPED DRAIN (LDD)en_US
dc.subjectOBLIQUE IMPLANTATIONen_US
dc.subjectSURFACE COUNTER DOPED LDD (SCD-LDD)en_US
dc.subjectHOT CARRIER RELIABILITYen_US
dc.titleA NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITYen_US
dc.typeArticleen_US

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