Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation
| dc.citation.epage | 4035 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 4029 | en_US |
| dc.citation.volume | 145 | en_US |
| dc.contributor.author | Chuang, JC | en_US |
| dc.contributor.author | Chen, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:47:25Z | |
| dc.date.available | 2014-12-08T15:47:25Z | |
| dc.date.issued | 1998-11-01 | en_US |
| dc.description.abstract | The effects of thermal N-2 annealing on the passivation capability of sputtered Ta and Ta-nitride [Ta(-N)] layers against Cu oxidation in a 200 Angstrom Ta(-N) covered Ta(-N)/Cu/SiO2/Si structures was investigated. The N-2 annealed Ta layers revealed degradation in passivation capability, presumably due to grain growth of the Ta passivation layer. In contrast, the nitrogen-doped Ta-nitride layers showed a contrary trend. For the Ta-nitride layer with 23.5 atom % of nitrogen, passivation capability was effectively improved by N-2 annealing at 300 degrees C. For the Ta-nitride layer with 30.5 atom % of nitrogen, N-2 annealing at higher temperatures (500-700 degrees C) was necessary to improve the passivation capability. The healing of sputtering damage of Ta-nitride passivation layers by the thermal N-2 annealing was responsible, presumably, for the improvement of passivation capability. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31790 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation | en_US |
| dc.type | Article | en_US |