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Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

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dc.citation.epage1665en_US
dc.citation.issue10en_US
dc.citation.spage1662en_US
dc.citation.volume40en_US
dc.citation.woscount0en_US
dc.contributor.authorChung, Yun-Yanen_US
dc.contributor.authorLi, Chi-Fengen_US
dc.contributor.authorLin, Chao-Tingen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.date.accessioned2019-12-13T01:09:53Z
dc.date.available2019-12-13T01:09:53Z
dc.date.issued2019-10-01en_US
dc.description.abstractThis study determined the top (vertical) and edge (horizontal) resistivities of metal-MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, rho(C_edge), was almost two orders of magnitude lower than the top contact resistivity, rho(C_top). Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal-two-dimensional material contact.en_US
dc.identifier.doi10.1109/LED.2019.2935538en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2019.2935538en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/153001
dc.identifier.wosnumberWOS:000489740400024en_US
dc.language.isoen_USen_US
dc.subjectTLMen_US
dc.subjectmetal-2D material contacten_US
dc.subjectMoS2en_US
dc.subjectTMDen_US
dc.subjectedge contact resistivityen_US
dc.subjectNb-dopeden_US
dc.subjecttwo-step sulfurizationen_US
dc.titleExperimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurementen_US
dc.typeArticleen_US

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