Nanocrystallization and interfacial tension of sol-gel derived memory
| dc.citation.epage | en_US | |
| dc.citation.issue | 12 | en_US |
| dc.citation.volume | 92 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Wu, Chi-Chang | en_US |
| dc.contributor.author | Tsai, Yi-Jen | en_US |
| dc.contributor.author | Chu, Min-Ching | en_US |
| dc.contributor.author | Yang, Shao-Ming | en_US |
| dc.contributor.author | Ko, Fu-Hsiang | en_US |
| dc.contributor.author | Liu, Pin-Lin | en_US |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.author | You, Hsin-Chiang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:26Z | |
| dc.date.available | 2014-12-08T15:12:26Z | |
| dc.date.issued | 2008-03-24 | en_US |
| dc.description.abstract | The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement. (c) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2904626 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2904626 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9560 | |
| dc.identifier.wosnumber | WOS:000254510300082 | |
| dc.language.iso | en_US | en_US |
| dc.title | Nanocrystallization and interfacial tension of sol-gel derived memory | en_US |
| dc.type | Article | en_US |