Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns
| dc.citation.epage | + | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 1618 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 99 | |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chang, Chia-Hua | en_US |
| dc.contributor.author | Chiu, Ching-Hua | en_US |
| dc.contributor.author | Yang, Chin-Sheng | en_US |
| dc.contributor.author | Yu, Jue-Chin | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Hsu, Shih-Hsin | en_US |
| dc.contributor.author | Chang, Yia-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:36Z | |
| dc.date.available | 2014-12-08T15:09:36Z | |
| dc.date.issued | 2009-04-27 | en_US |
| dc.description.abstract | Highly-oriented indium tin oxide nano-columns are prepared by glancing-angle deposition with nitrogen. The tapered column profiles, which function as a graded-refiractive-index layer, offer superior antireflective characteristics. The nano-structured material serves as the conductive antireflective layer for GaAs solar cells, demonstrating a viable efficiency-boosting strategy for next-generation photovoltaics. | en_US |
| dc.identifier.doi | 10.1002/adma.200802563 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.200802563 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7341 | |
| dc.identifier.wosnumber | WOS:000265950500016 | |
| dc.language.iso | en_US | en_US |
| dc.title | Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns | en_US |
| dc.type | Article | en_US |