High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
| dc.citation.epage | 485 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 483 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Chang, YS | en_US |
| dc.contributor.author | Lai, FY | en_US |
| dc.contributor.author | Hseuh, TH | en_US |
| dc.contributor.author | Chu, LT | en_US |
| dc.contributor.author | Laih, LH | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:31Z | |
| dc.date.available | 2014-12-08T15:39:31Z | |
| dc.date.issued | 2004-03-01 | en_US |
| dc.description.abstract | In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2003.07.004 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2003.07.004 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26973 | |
| dc.identifier.wosnumber | WOS:000188117500015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | VCSEL | en_US |
| dc.subject | Si implant | en_US |
| dc.subject | implantation-induced disorder | en_US |
| dc.subject | high speed | en_US |
| dc.title | High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers | en_US |
| dc.type | Article | en_US |