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Surface conduction electron emission in palladium hydrogenation nanogaps

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume41en_US
dc.citation.woscount6
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:12:17Z
dc.date.available2014-12-08T15:12:17Z
dc.date.issued2008-04-21en_US
dc.description.abstractA nanometre scale gap (nanogap) structure in palladium strip fabricated by hydrogen absorption under high-pressure treatment was proposed and applied to the surface conduction electron emitter for flat panel displays. In this paper we demonstrate that the structure possesses different high field-emission efficiencies with low turn-on voltages and high focused capability, compared with the conventional type. An experimentally validated simulation is conducted to investigate the field-emission characteristics of the explored structure. It is observed the inclined sidewall and protrusion of this nanogap can enhance the local electric field and the focused capability and protect emission areas from being damaged by impurity ions during field-emission operation. This study benefits the advanced design of metallic electrodes in nanodevice technology for new types of electron sources and display applications.en_US
dc.identifier.doi10.1088/0022-3727/41/8/085301en_US
dc.identifier.issn0022-3727en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/41/8/085301en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9447
dc.identifier.wosnumberWOS:000254329500032
dc.language.isoen_USen_US
dc.titleSurface conduction electron emission in palladium hydrogenation nanogapsen_US
dc.typeArticleen_US

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