THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
| dc.citation.epage | 505 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 503 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | WANG, FS | en_US |
| dc.contributor.author | TSAI, MJ | en_US |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:06Z | |
| dc.date.available | 2014-12-08T15:03:06Z | |
| dc.date.issued | 1995-11-01 | en_US |
| dc.description.abstract | The NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/mu m and the on/off current ratio higher than 10(8), and also better hot-carrier reliability as well as thermal stability than the H-2-plasma ones, These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. | en_US |
| dc.identifier.doi | 10.1109/55.468281 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.468281 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1678 | |
| dc.identifier.wosnumber | WOS:A1995TA68100012 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS | en_US |
| dc.type | Article | en_US |