化學氣相沈積銅金屬之覆蓋率及填塞率之技術研究

dc.contributor.author	吳世全	en_US
dc.contributor.author	WU SHICH-CHUAN	en_US
dc.contributor.department	國立交通大學毫微米實驗室	zh_TW
dc.date.accessioned	2014-12-13T10:36:56Z
dc.date.available	2014-12-13T10:36:56Z
dc.date.issued	1999	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC88-2215-E317-007	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418231&docId=74196	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/94273
dc.language.iso	zh_TW	en_US
dc.subject	化學氣相沈積法	zh_TW
dc.subject	銅金屬連線	zh_TW
dc.subject	化學機械研磨	zh_TW
dc.subject	填塞率	zh_TW
dc.subject	覆蓋率	zh_TW
dc.subject	極大型積體電路	zh_TW
dc.subject	CVD	en_US
dc.subject	Copper metal interconnection	en_US
dc.subject	Chemical mechanical polishing	en_US
dc.subject	Filling rate	en_US
dc.subject	Conformality	en_US
dc.subject	ULSI	en_US
dc.title	化學氣相沈積銅金屬之覆蓋率及填塞率之技術研究	zh_TW
dc.title	Improving of Technology of Step Coverage and Filling Rate of CVD-Cu Metal in IC Fabrication	en_US
dc.type	Plan	en_US

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