BCB-to-oxide bonding technology for 3D integration
| dc.citation.epage | 355 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 352 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lin, S. L. | en_US |
| dc.contributor.author | Huang, W. C. | en_US |
| dc.contributor.author | Ko, C. T. | en_US |
| dc.contributor.author | Chen, K. N. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:23Z | |
| dc.date.available | 2014-12-08T15:21:23Z | |
| dc.date.issued | 2012-02-01 | en_US |
| dc.description.abstract | Process optimization of BCB polymer to silicon oxide bonding was investigated. The suitable bonding temperature is about 300 degrees C, while bond failure of BCB-to-oxide bonding is observed starting from 400 degrees C. Bonding interface morphologies and bond strengths of BCB-to-oxide bonding were investigated as well. PECVD oxide to BCB bonding has better bonding quality than that of thermal oxide to BCB bonding. Si-O-Si bonds may be the reason of a strong BCB to oxide bonding. Water molecules link BCB and oxide surfaces during the initial contact, while Si-O-Si bonds are formed during bonding. This proposed mechanism of BCB-to-oxide bonding provides a guideline for polymer to oxide hybrid bonding technology in 3D integration. (C) 2011 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.microrel.2011.05.008 | en_US |
| dc.identifier.issn | 0026-2714 | en_US |
| dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2011.05.008 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15220 | |
| dc.identifier.wosnumber | WOS:000300190600009 | |
| dc.language.iso | en_US | en_US |
| dc.title | BCB-to-oxide bonding technology for 3D integration | en_US |
| dc.type | Article | en_US |