A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS
| dc.citation.epage | 720 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 712 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | CHIN, SP | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:34Z | |
| dc.date.available | 2014-12-08T15:04:34Z | |
| dc.date.issued | 1993-04-01 | en_US |
| dc.description.abstract | A new I-V model for short gate-length MESFET's operated in the turn-on region is proposed, in which the two-dimensional potential distribution contributed by the depletion-layer charges under the gate and in the ungate region are separately obtained by conventional 1D approximation and Green's function solution technique. Moreover, the bias-dependent parasitic resistances due to the modulation of depletion layer in the ungate region for non-self-alignment MESFET's are also taken into account in the developed I-V model. It is shown that good agreements are obtained between the developed new I-V model and the results of 2D numerical analysis. Moreover, comparisons between the proposed analytical model and the experimental data are made and excellent agreements are obtained. | en_US |
| dc.identifier.doi | 10.1109/16.202782 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.202782 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3062 | |
| dc.identifier.wosnumber | WOS:A1993KR13800005 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS | en_US |
| dc.type | Article | en_US |