Sol-gel-derived double-layered nanocrystal memory
| dc.citation.epage | en_US | |
| dc.citation.issue | 25 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Ko, Fu-Hsiang | en_US |
| dc.contributor.author | You, Hsin-Chiang | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:12Z | |
| dc.date.available | 2014-12-08T15:15:12Z | |
| dc.date.issued | 2006-12-18 | en_US |
| dc.description.abstract | The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 degrees C for 1 min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V-th shifting because of the higher probability for trapping the charge carrier. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2416248 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2416248 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11431 | |
| dc.identifier.wosnumber | WOS:000243415200052 | |
| dc.language.iso | en_US | en_US |
| dc.title | Sol-gel-derived double-layered nanocrystal memory | en_US |
| dc.type | Article | en_US |