Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 10 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, S. D. | en_US |
| dc.contributor.author | Ilchenko, V. V. | en_US |
| dc.contributor.author | Marin, V. V. | en_US |
| dc.contributor.author | Panarin, K. Y. | en_US |
| dc.contributor.author | Buyanin, A. A. | en_US |
| dc.contributor.author | Tretyak, O. V. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:56Z | |
| dc.date.available | 2014-12-08T15:10:56Z | |
| dc.date.issued | 2008-09-08 | en_US |
| dc.description.abstract | The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2975169 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2975169 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8363 | |
| dc.identifier.wosnumber | WOS:000259797000077 | |
| dc.language.iso | en_US | en_US |
| dc.title | Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots | en_US |
| dc.type | Article | en_US |