Solution-based silk fibroin dielectric in n-type C-60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer
| dc.citation.epage | en_US | |
| dc.citation.issue | 23 | en_US |
| dc.citation.volume | 103 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tsai, Li-Shiuan | en_US |
| dc.contributor.author | Hwang, Jenn-Chang | en_US |
| dc.contributor.author | Lee, Chun-Yi | en_US |
| dc.contributor.author | Lin, Yi-Ting | en_US |
| dc.contributor.author | Tsai, Cheng-Lun | en_US |
| dc.contributor.author | Chang, Ting-Hao | en_US |
| dc.contributor.author | Chueh, Yu-Lun | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2014-12-08T15:34:04Z | |
| dc.date.available | 2014-12-08T15:34:04Z | |
| dc.date.issued | 2013-12-02 | en_US |
| dc.description.abstract | A pentacene interlayer of 2 nm thick is inserted between fullerene (C-60) and the solution-based silk fibroin dielectric in C-60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C-60 layer, leading to the increase of field-effect mobility (mu(FE)) from 0.014 to 1 cm(2) V-1 s(-1) in vacuum. The mu(FE) value of the C-60 OFET is further enhanced to 10 cm(2) V-1 s(-1) when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed. (C) 2013 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4841595 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4841595 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23421 | |
| dc.identifier.wosnumber | WOS:000328634900087 | |
| dc.language.iso | en_US | en_US |
| dc.title | Solution-based silk fibroin dielectric in n-type C-60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer | en_US |
| dc.type | Article | en_US |