A NEW STRUCTURE-ORIENTED MODEL FOR WELL RESISTANCE IN CMOS LATCHUP STRUCTURES
| dc.citation.epage | 897 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 890 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | CHEN, MJ | en_US |
| dc.contributor.author | SZE, SC | en_US |
| dc.contributor.author | CHEN, HH | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:05Z | |
| dc.date.available | 2014-12-08T15:06:05Z | |
| dc.date.issued | 1987-04-01 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4651 | |
| dc.identifier.wosnumber | WOS:A1987G864800026 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW STRUCTURE-ORIENTED MODEL FOR WELL RESISTANCE IN CMOS LATCHUP STRUCTURES | en_US |
| dc.type | Article | en_US |