P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:02Z | |
| dc.date.available | 2014-12-13T10:37:02Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-040 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418050&docId=74155 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94338 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 快閃式記憶體 | zh_TW |
| dc.subject | 熱載子 | zh_TW |
| dc.subject | 可靠度 | zh_TW |
| dc.subject | 氧化層 | zh_TW |
| dc.subject | 耐久性 | zh_TW |
| dc.subject | 擾動 | zh_TW |
| dc.subject | Flash memory | en_US |
| dc.subject | Hot carrier | en_US |
| dc.subject | Reliability | en_US |
| dc.subject | Oxided layer | en_US |
| dc.subject | Endurance | en_US |
| dc.subject | Disturbance | en_US |
| dc.title | P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究 | zh_TW |
| dc.title | Hot Carrier Induced Reliability Issues in P-channel Flash Memory after Long Term P/E Cycles | en_US |
| dc.type | Plan | en_US |