SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
| dc.citation.epage | 511 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 509 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.contributor.author | CHANG, HC | en_US |
| dc.contributor.author | LIU, HW | en_US |
| dc.contributor.author | SU, HP | en_US |
| dc.contributor.author | HONG, G | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:03:07Z | |
| dc.date.available | 2014-12-08T15:03:07Z | |
| dc.date.issued | 1995-11-01 | en_US |
| dc.description.abstract | High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C. | en_US |
| dc.identifier.doi | 10.1109/55.468283 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.468283 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1691 | |
| dc.language.iso | en_US | en_US |
| dc.title | SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS | en_US |
| dc.type | Article | en_US |