FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM
| dc.citation.epage | 3526 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 3524 | en_US |
| dc.citation.volume | 67 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | TSUI, BY | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:36Z | |
| dc.date.available | 2014-12-08T15:05:36Z | |
| dc.date.issued | 1990-04-01 | en_US |
| dc.identifier.doi | 10.1063/1.345346 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.345346 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4142 | |
| dc.identifier.wosnumber | WOS:A1990CV63900049 | |
| dc.language.iso | en_US | en_US |
| dc.title | FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM | en_US |
| dc.type | Note | en_US |
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