SiC-capped nanotip arrays for field emission with ultralow turn-on field

Abstract

Silicon nanotips with tip diameter and height measuring 1 nm and 1 mum, respectively, and density in the range of 10(9)-3x10(11) cm(-2), were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200 degreesC. Field emission current densities of 3.0 mA/cm(2) at an applied field of similar to1.0 V/mum was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/mum turn-on field to draw a 10 muA/cm(2) current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices. (C) 2003 American Institute of Physics.