Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors

Abstract

In this paper, a self-consistent model to simulate the general characteristics of one-dimensional semiconductor structures is demonstrated. During calculation, possible quantum effects and the distributions of both electrons and holes are all considered. In this model, a continuity equation is solved to calculate the distribution of free electrons and holes, The possible quantum wells are sought using the Schrodinger equation. The overall charge density and potential are obtained self-consistently by an iteration scheme. The C-V characteristics of the delta-doped structures are simulated and then compared with those of practical samples. By comparing with these delta-doped samples, the effective numbers of dopant atoms can be precisely determined. For these highly doped samples, it is found that the activation rates are only about half. This finding can be verified by Hall measurements which confirms the accuracy in this study. (C) 1997 Elsevier Science S.A.