Two-dimensional photo-mapping on CMOS single-photon avalanche diodes
| dc.citation.epage | 16471 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.spage | 16462 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wu, Jau-Yang | en_US |
| dc.contributor.author | Lu, Ping-Keng | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:18Z | |
| dc.date.available | 2014-12-08T15:36:18Z | |
| dc.date.issued | 2014-06-30 | en_US |
| dc.description.abstract | Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the help of simulation tool, the non-uniform photo-counts arising from the electric field non-uniformity have been well explained. As the quasi-3D distribution of electric field in the active region can be mapped, our method is useful for engineering the device structure to improve the photo-response of SPADs. (C) 2014 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.22.016462 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.22.016462 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24632 | |
| dc.identifier.wosnumber | WOS:000338055900123 | |
| dc.language.iso | en_US | en_US |
| dc.title | Two-dimensional photo-mapping on CMOS single-photon avalanche diodes | en_US |
| dc.type | Article | en_US |