Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices
| dc.citation.epage | 1115 | en_US |
| dc.citation.spage | 1112 | en_US |
| dc.contributor.author | Lin, Y. F. | en_US |
| dc.contributor.author | Jian, W. B. | en_US |
| dc.contributor.author | Wu, Z. Y. | en_US |
| dc.contributor.author | Chen, F. R. | en_US |
| dc.contributor.author | Kai, J. J. | en_US |
| dc.contributor.author | Lin, J. J. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:44Z | |
| dc.date.available | 2014-12-08T15:46:44Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperatare resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. | en_US |
| dc.identifier.doi | 10.1109/INEC.2008.4585677 | en_US |
| dc.identifier.isbn | 978-1-4244-1572-4 | en_US |
| dc.identifier.journal | 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/INEC.2008.4585677 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31431 | |
| dc.identifier.wosnumber | WOS:000259893500254 | |
| dc.language.iso | en_US | en_US |
| dc.title | Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices | en_US |
| dc.type | Article | en_US |