Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Abstract

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperatare resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.