A novel fully CMOS process compatible PREM for SOC applications
| dc.citation.epage | 204 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 203 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Yeh, CC | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Tsai, WJ | en_US |
| dc.contributor.author | Lu, TC | en_US |
| dc.contributor.author | Liao, YY | en_US |
| dc.contributor.author | Zous, NK | en_US |
| dc.contributor.author | Chin, CY | en_US |
| dc.contributor.author | Chen, YR | en_US |
| dc.contributor.author | Chen, MS | en_US |
| dc.contributor.author | Ting, WC | en_US |
| dc.contributor.author | Lu, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:19:37Z | |
| dc.date.available | 2014-12-08T15:19:37Z | |
| dc.date.issued | 2005-03-01 | en_US |
| dc.description.abstract | A novel nonvolatile memory cell named programmable resistor with eraseless memory (PREM) is proposed for system on chip applications for the first time. PREM combines a novel "eraseless" algorithm and the progressive breakdown of an ultrathin oxide. No or one extra mask is needed with a standard CMOS process. Multitime programming, multilevel cell, nonvolatility, and low-voltage operation are realized. Good reliability is demonstrated based on the result of a single cell. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.843221 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.843221 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13959 | |
| dc.identifier.wosnumber | WOS:000227262500026 | |
| dc.language.iso | en_US | en_US |
| dc.subject | eraseless | en_US |
| dc.subject | multilevel cell (MLC) | en_US |
| dc.subject | nonvolatile | en_US |
| dc.subject | multitime programming (MTP) | en_US |
| dc.subject | progressive breakdown | en_US |
| dc.subject | programmable resistor with eraseless memory (PREM) | en_US |
| dc.subject | system on chip (SOC) | en_US |
| dc.title | A novel fully CMOS process compatible PREM for SOC applications | en_US |
| dc.type | Article | en_US |