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A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR

dc.citation.epage80en_US
dc.citation.issue4en_US
dc.citation.spage78en_US
dc.citation.volume4en_US
dc.citation.woscount1
dc.contributor.authorWU, CYen_US
dc.contributor.authorLEE, CSen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:21Z
dc.date.available2014-12-08T15:06:21Z
dc.date.issued1983en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4931
dc.identifier.wosnumberWOS:A1983QS54300003
dc.language.isoen_USen_US
dc.titleA NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTORen_US
dc.typeArticleen_US

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