EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS

Abstract

Poly-Si thin-film transistors (TFT's) have a large off -state current that is unacceptable for pixel river application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off -state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).