A NEW CONDUCTION MODEL FOR POLYCRYSTALLINE SILICON FILMS
| dc.citation.epage | 98 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 95 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.woscount | 40 | |
| dc.contributor.author | LU, NCC | en_US |
| dc.contributor.author | GERZBERG, L | en_US |
| dc.contributor.author | LU, CY | en_US |
| dc.contributor.author | MEINDL, JD | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:27Z | |
| dc.date.available | 2014-12-08T15:06:27Z | |
| dc.date.issued | 1981 | en_US |
| dc.identifier.issn | 0193-8576 | en_US |
| dc.identifier.journal | ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5029 | |
| dc.identifier.wosnumber | WOS:A1981LT05200006 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW CONDUCTION MODEL FOR POLYCRYSTALLINE SILICON FILMS | en_US |
| dc.type | Article | en_US |
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