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A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology

dc.citation.epage491en_US
dc.citation.issue9en_US
dc.citation.spage489en_US
dc.citation.volume21en_US
dc.citation.woscount2
dc.contributor.authorSu, Hsuan-Yien_US
dc.contributor.authorHu, Roberten_US
dc.contributor.authorWu, Chung-Yuen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:25Z
dc.date.available2014-12-08T15:27:25Z
dc.date.issued2011-09-01en_US
dc.description.abstractIn this letter, a 78 similar to 102 GHz front-end receiver designed in 90 nm CMOS technology is presented. It consists of an ultra-wideband low-noise amplifier, a subharmonic mixer, and an IF buffer. This receiver has a peak gain of 11.8 dB at 94 GHz with the noise figure of 13.4 dB. The measured input-referred 1 dB compression point is -14.5 dBm and the total power dissipation is 18.6 mW. The chip size is 680 x 1020 mu m(2).en_US
dc.identifier.doi10.1109/LMWC.2011.2162940en_US
dc.identifier.issn1531-1309en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2011.2162940en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19670
dc.identifier.wosnumberWOS:000294670900013
dc.language.isoen_USen_US
dc.subjectCMOS receiveren_US
dc.subjectlow noise amplifier (LNA)en_US
dc.subjectsubharmonic mixeren_US
dc.subjectultra wideband (UWB)en_US
dc.subjectW-banden_US
dc.titleA 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technologyen_US
dc.typeArticleen_US

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