Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
| dc.citation.epage | L511 | en_US |
| dc.citation.issue | 20-24 | en_US |
| dc.citation.spage | L509 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Yang, Hung-Pin D. | en_US |
| dc.contributor.author | Chen, I-Liang | en_US |
| dc.contributor.author | Lee, Chen-Hong | en_US |
| dc.contributor.author | Chiou, Chih-Hong | en_US |
| dc.contributor.author | Lee, Tsin-Dong | en_US |
| dc.contributor.author | Hsu, I-Chen | en_US |
| dc.contributor.author | Lai, Fang-I | en_US |
| dc.contributor.author | Lin, Gray | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Chi, Jim Y. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:52Z | |
| dc.date.available | 2014-12-08T15:13:52Z | |
| dc.date.issued | 2007-06-01 | en_US |
| dc.description.abstract | We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed. | en_US |
| dc.identifier.doi | 10.1143/JJAP.46.L509 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.L509 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10720 | |
| dc.identifier.wosnumber | WOS:000247828600012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InGaAs | en_US |
| dc.subject | highly strained | en_US |
| dc.subject | VCSEL | en_US |
| dc.title | Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers | en_US |
| dc.type | Article | en_US |