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Current-scaling a-Si : H TFT pixel-electrode circuit for AM-OLEDs: Electrical properties and stability

dc.citation.epage2410en_US
dc.citation.issue9en_US
dc.citation.spage2403en_US
dc.citation.volume54en_US
dc.citation.woscount11
dc.contributor.authorLee, Hojinen_US
dc.contributor.authorLin, Yen-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorKanicki, Jerzyen_US
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:13:24Z
dc.date.available2014-12-08T15:13:24Z
dc.date.issued2007-09-01en_US
dc.description.abstractWe fabricated and characterized the hydrogenate amorphous-silicon thin-film transistor (a-Si:H TFT) pixel-electrode circuit with the current-scaling function that can be used for active-matrix organic light-emitting displays (AM-OLEDs). As expected from previously reported simulation results, the fabricated pixel-electrode circuit showed an enhanced current-scaling performance for a high-resolution AM-OLED based on a-Si:H TFTs in comparison to other types of current-driven pixel circuits. It also showed a better electrical and thermal stability for different OLED current levels in comparison to the conventional current-driven pixel-electrode circuit.en_US
dc.identifier.doi10.1109/TED.2007.902665en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2007.902665en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10362
dc.identifier.wosnumberWOS:000249104900034
dc.language.isoen_USen_US
dc.subjectactive-matrix organic light-emitting display (AM-OLED)en_US
dc.subjectcurrent programen_US
dc.subjectcurrent scalingen_US
dc.subjecthydrogenate amorphous silicon (a-Si : H)en_US
dc.subjectpixel-electrode circuiten_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleCurrent-scaling a-Si : H TFT pixel-electrode circuit for AM-OLEDs: Electrical properties and stabilityen_US
dc.typeArticleen_US

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