Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films
| dc.citation.epage | 4430 | en_US |
| dc.citation.issue | 7A | en_US |
| dc.citation.spage | 4427 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Tsai, CT | en_US |
| dc.contributor.author | Chuu, DS | en_US |
| dc.contributor.author | Leou, JY | en_US |
| dc.contributor.author | Chou, WC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:38Z | |
| dc.date.available | 2014-12-08T15:01:38Z | |
| dc.date.issued | 1997-07-01 | en_US |
| dc.description.abstract | Zn1-xMnxSe thin films with various Mn concentrations were produced by the radio frequency sputtering technique. As the Mn concentration increased, it was found that two types of crystal structures (zinc blende and wurtzite) compete with each other. The grain size of the Zn1-xMnx Se thin films decreased as Mn concentration x was increased. Moreover, the zone-center optical phonons of Zn1-xMnxSe thin films exhibit an intermediate mode behavior which is consistent with that of the bulk crystals. | en_US |
| dc.identifier.doi | 10.1143/JJAP.36.4427 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.36.4427 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/458 | |
| dc.identifier.wosnumber | WOS:A1997XR22300044 | |
| dc.language.iso | en_US | en_US |
| dc.subject | rf sputtering | en_US |
| dc.subject | zinc blende | en_US |
| dc.subject | wurtzite | en_US |
| dc.subject | intermediate mode behavior | en_US |
| dc.title | Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films | en_US |
| dc.type | Article | en_US |