A physics-based transit time model for GaInP/GaAs HBT devices

dc.citation.epage	1034	en_US
dc.citation.spage	1031	en_US
dc.contributor.author	Tseng, Sheng-Che	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.author	Chen, Wei-Yu	en_US
dc.contributor.author	Su, Jen-Yi	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2014-12-08T15:25:19Z
dc.date.available	2014-12-08T15:25:19Z
dc.date.issued	2005	en_US
dc.description.abstract	A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.	en_US
dc.identifier.isbn	0-7803-9433-X	en_US
dc.identifier.journal	2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17703
dc.identifier.wosnumber	WOS:000237449901090
dc.language.iso	en_US	en_US
dc.subject	transit time	en_US
dc.subject	GaInP/GaAs HBT	en_US
dc.subject	minority charge	en_US
dc.subject	HICUM and VBIC	en_US
dc.title	A physics-based transit time model for GaInP/GaAs HBT devices	en_US
dc.type	Proceedings Paper	en_US

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