RAMAN INVESTIGATION OF RUS2
| dc.citation.epage | 593 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 589 | en_US |
| dc.citation.volume | 69 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | LIN, SS | en_US |
| dc.contributor.author | HUANG, YS | en_US |
| dc.contributor.author | HUANG, CR | en_US |
| dc.contributor.author | LEE, MC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:52Z | |
| dc.date.available | 2014-12-08T15:05:52Z | |
| dc.date.issued | 1989-02-01 | en_US |
| dc.identifier.issn | 0038-1098 | en_US |
| dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4401 | |
| dc.identifier.wosnumber | WOS:A1989T239200001 | |
| dc.language.iso | en_US | en_US |
| dc.title | RAMAN INVESTIGATION OF RUS2 | en_US |
| dc.type | Article | en_US |
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