Influence of phonon-associated tunneling rate on transport through a single-molecule transistor
| dc.citation.epage | 92 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 87 | en_US |
| dc.citation.volume | 151 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tang, Ying-Tsan | en_US |
| dc.contributor.author | Chuu, Der-San | en_US |
| dc.contributor.author | Lin, Kao-Chin | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:05Z | |
| dc.date.available | 2014-12-08T15:38:05Z | |
| dc.date.issued | 2011-01-01 | en_US |
| dc.description.abstract | We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate We find that the electron-phonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n = 0) and the first phonon sideband (n = 1) These anomalies are consistent with the experimental observations in transport experiments (C) 2010 Elsevier Ltd All rights reserved | en_US |
| dc.identifier.doi | 10.1016/j.ssc.2010.10.007 | en_US |
| dc.identifier.issn | 0038-1098 | en_US |
| dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.ssc.2010.10.007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26122 | |
| dc.identifier.wosnumber | WOS:000285674000021 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Phonon assisted tunneling | en_US |
| dc.subject | Electron-phonon interactions | en_US |
| dc.subject | Electronic transport | en_US |
| dc.title | Influence of phonon-associated tunneling rate on transport through a single-molecule transistor | en_US |
| dc.type | Article | en_US |