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Naphthobisthiadiazole-Based Selenophene-Incorporated Quarterchalcogenophene Copolymers for Field-Effect Transistors and Polymer Solar Cells

dc.citation.epage11683en_US
dc.citation.issue12en_US
dc.citation.spage11674en_US
dc.citation.volume11en_US
dc.citation.woscount0en_US
dc.contributor.authorCao, Fong-Yien_US
dc.contributor.authorLin, Fang-Yuen_US
dc.contributor.authorTseng, Cheng-Chunen_US
dc.contributor.authorHung, Kai-Enen_US
dc.contributor.authorHsu, Jhih-Yangen_US
dc.contributor.authorSu, Yen-Chenen_US
dc.contributor.authorCheng, Yen-Juen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2019-05-02T00:25:56Z
dc.date.available2019-05-02T00:25:56Z
dc.date.issued2019-03-27en_US
dc.description.abstractIn this research, we developed six new selenophene-incorporated naphthobisthiadiazole-based donor-acceptor polymers PNT2Th2Se-OD, PNT2Se2Th-OD, PNT4Se-OD, PNT2Th2Se-DT, PNT2Se2Th-DT, and PNT4Se-DT. The structure-property relationships have been systematically established through the comparison of their structural variations: (1) isomeric biselenophene/bithiophene arrangement between PNT2Th2Se and PNT2Se2Th polymers, (2) biselenophene/bithiophene and quarterselenophene donor units between PNT2Th2Se/PNT2Se2Th and PNT4Se polymers, and (3) side-chain modification between the 2-octyldodecylthiophene (OD)- and 2-decyltetradecyl (DT)-series polymers. The incorporation of selenophene units in the copolymers induces stronger charge transfer to improve the light-harvesting capability while maintaining the strong intermolecular interactions to preserve the intrinsic crystallinity for high carrier mobility. The organic field-effect transistor device using PNT2Th2Se-OD achieved a high hole mobility of 0.36 cm(2) V-1 s(-1) with an on/off ratio of 1.9 x 10(5). The solar cells with PNT2Th2Se-OD:PC71BM exhibited a power conversion efficiency of 9.47% with a V-oc of 0.68 V, an fill factor of 67%, and an impressive J(SC), of 20.69 mA cm(-2).en_US
dc.identifier.doi10.1021/acsami.9b00083en_US
dc.identifier.issn1944-8244en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.9b00083en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/151661
dc.identifier.wosnumberWOS:000462950600063en_US
dc.language.isoen_USen_US
dc.subjectchalcogenopheneen_US
dc.subjectselenopheneen_US
dc.subjectnaphthobisthiadiazoleen_US
dc.subjectpolymer solar cellsen_US
dc.subjectorganic field-effect transistorsen_US
dc.titleNaphthobisthiadiazole-Based Selenophene-Incorporated Quarterchalcogenophene Copolymers for Field-Effect Transistors and Polymer Solar Cellsen_US
dc.typeArticleen_US

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