AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI
| dc.citation.epage | 1269 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1263 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | HUANG, GS | en_US |
| dc.contributor.author | CHEN, HH | en_US |
| dc.contributor.author | TSENG, FC | en_US |
| dc.contributor.author | SHIH, CT | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:13Z | |
| dc.date.available | 2014-12-08T15:06:13Z | |
| dc.date.issued | 1985-12-01 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4788 | |
| dc.identifier.wosnumber | WOS:A1985AXH4700013 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI | en_US |
| dc.type | Article | en_US |
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