Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
| dc.citation.epage | 129 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 128 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Kuo, CP | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chen, TP | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:07Z | |
| dc.date.available | 2014-12-08T15:01:07Z | |
| dc.date.issued | 1998-01-08 | en_US |
| dc.description.abstract | The authors report a novel Si-B diffusion source for doping p(+)-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. AU of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/35 | |
| dc.identifier.wosnumber | WOS:000071892700088 | |
| dc.language.iso | en_US | en_US |
| dc.title | Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source | en_US |
| dc.type | Article | en_US |