Endurance study of switching characteristics in NiO films
| dc.citation.epage | E1031 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | E1030 | en_US |
| dc.citation.volume | 310 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lee, M. D. | en_US |
| dc.contributor.author | Lo, C. K. | en_US |
| dc.contributor.author | Peng, T. Y. | en_US |
| dc.contributor.author | Chen, S. Y. | en_US |
| dc.contributor.author | Yao, Y. D. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:14:33Z | |
| dc.date.available | 2014-12-08T15:14:33Z | |
| dc.date.issued | 2007-03-01 | en_US |
| dc.description.abstract | Bi-stable switching effect has been studied in nickel oxide. lms with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory. (C) 2006 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jmmm.2006.11.075 | en_US |
| dc.identifier.issn | 0304-8853 | en_US |
| dc.identifier.journal | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jmmm.2006.11.075 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11069 | |
| dc.identifier.wosnumber | WOS:000247720400480 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nickel oxide | en_US |
| dc.subject | RRAM | en_US |
| dc.subject | Bi-stable memory switching effect | en_US |
| dc.title | Endurance study of switching characteristics in NiO films | en_US |
| dc.type | Article | en_US |