MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS
| dc.citation.epage | 33 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 28 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHUANG, HF | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | WU, SC | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:18Z | |
| dc.date.available | 2014-12-08T15:05:18Z | |
| dc.date.issued | 1991-03-01 | en_US |
| dc.description.abstract | The thermal stability of MoSi(x) Schottky contacts to GaAs has been studied. The contacts were analysed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), sheet resistance, and current-voltage measurements. We have studied MoSi(x) with the compositions x = 0, 0.3, 0.6, 1, and 2. The films were annealed at various temperatures up to 850-degrees-C. The thermal stability of the films is found to be x-dependent. The best composition for thermally stable Schottky contacts is Mo5Si3. Good Schottky characteristics were retained with annealing temperatures up to 850-degrees-C for 30 min. | en_US |
| dc.identifier.doi | 10.1007/BF00695001 | en_US |
| dc.identifier.issn | 0957-4522 | en_US |
| dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/BF00695001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3848 | |
| dc.identifier.wosnumber | WOS:A1991FB09200008 | |
| dc.language.iso | en_US | en_US |
| dc.title | MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS | en_US |
| dc.type | Article | en_US |
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