Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes
| dc.citation.epage | en_US | |
| dc.citation.issue | 16 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 20 | |
| dc.contributor.author | Lee, Y. J. | en_US |
| dc.contributor.author | Lin, P. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:14Z | |
| dc.date.available | 2014-12-08T15:14:14Z | |
| dc.date.issued | 2007-04-16 | en_US |
| dc.description.abstract | An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 lm/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2722672 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2722672 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10894 | |
| dc.identifier.wosnumber | WOS:000245870400015 | |
| dc.language.iso | en_US | en_US |
| dc.title | Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes | en_US |
| dc.type | Article | en_US |