Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
| dc.citation.epage | 1277 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1275 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hsu, Ching-Hsiang | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Chang, Hsun-Jui | en_US |
| dc.contributor.author | Yu, Hung-Wei | en_US |
| dc.contributor.author | Hong Quan Nguyen | en_US |
| dc.contributor.author | Chung, Chen-Chen | en_US |
| dc.contributor.author | Maa, Jer-Shen | en_US |
| dc.contributor.author | Pande, Krishna | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 照明與能源光電研究所 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2015-07-21T11:20:56Z | |
| dc.date.available | 2015-07-21T11:20:56Z | |
| dc.date.issued | 2014-12-01 | en_US |
| dc.description.abstract | Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure. | en_US |
| dc.identifier.doi | 10.1109/LED.2014.2361923 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2014.2361923 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/123865 | |
| dc.identifier.wosnumber | WOS:000345575400038 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | III-V concentrator solar cell | en_US |
| dc.subject | copper metallization | en_US |
| dc.subject | ohmic contact | en_US |
| dc.subject | low cost | en_US |
| dc.title | Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells | en_US |
| dc.type | Article | en_US |