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PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICON

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dc.citation.epageC368en_US
dc.citation.issue8en_US
dc.citation.spageC368en_US
dc.citation.volume126en_US
dc.citation.woscount0
dc.contributor.authorCHEN, MCen_US
dc.contributor.authorSILVESTRI, VJen_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:06:32Z
dc.date.available2014-12-08T15:06:32Z
dc.date.issued1979en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5106
dc.identifier.wosnumberWOS:A1979HH39300597
dc.language.isoen_USen_US
dc.titlePRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICONen_US
dc.typeMeeting Abstracten_US

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