Realization of In2O3 thin film transistors through reactive evaporation process
| dc.citation.epage | en_US | |
| dc.citation.issue | 13 | en_US |
| dc.citation.volume | 91 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | Dhananjay | en_US |
| dc.contributor.author | Chu, Chih-Wei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:20Z | |
| dc.date.available | 2014-12-08T15:13:20Z | |
| dc.date.issued | 2007-09-24 | en_US |
| dc.description.abstract | In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on SiO2 gate dielectric exhibited an on/off ratio of 10(4) and a field-effect mobility of 27 cm(2)/V s. High on-state current makes them potential candidates for flat-panel display devices. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2789788 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2789788 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10318 | |
| dc.identifier.wosnumber | WOS:000249787000045 | |
| dc.language.iso | en_US | en_US |
| dc.title | Realization of In2O3 thin film transistors through reactive evaporation process | en_US |
| dc.type | Article | en_US |