Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer
| dc.citation.epage | en_US | |
| dc.citation.issue | 1 | en_US |
| dc.citation.volume | 109 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Ou, Po-Chi | en_US |
| dc.contributor.author | Liu, Wei-Rein | en_US |
| dc.contributor.author | Ton, Ho-Jei | en_US |
| dc.contributor.author | Lin, Ja-Hon | en_US |
| dc.contributor.author | Hsieh, Wen-Feng | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:00Z | |
| dc.date.available | 2014-12-08T15:38:00Z | |
| dc.date.issued | 2011-01-01 | en_US |
| dc.description.abstract | We observed ultrafast free exciton thermalization time of 700-900 fs and obtained the magnitude of maximal differential absorption to be 1.8 x 10(4) cm(-1) with the pumping fluence of 10 mu J/cm(2) by measuring transient differential transmission in a thin ZnO epitaxial layer at room temperature. The largest induced transparency occurs near exciton resonance associated with absorption saturation by comparing the excitation from the above band-gap to band-tail states. The pumping dependent transient absorption reveals transition of excitonic relaxation from exciton-phonon scattering to exciton-exciton scattering or to an electron-hole plasma. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525993] | en_US |
| dc.identifier.doi | 10.1063/1.3525993 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3525993 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26090 | |
| dc.identifier.wosnumber | WOS:000286219300003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer | en_US |
| dc.type | Article | en_US |