深次微米T型閘極金氧半電晶體之改良研製及其效應之研究

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892215E009037.pdf (666.86 KB)

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Keywords

閘極漏電流 , 前非晶化佈植 , Gate leakage current , Preamorphization implant

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https://www.grb.gov.tw/search/planDetail?id=542052&docId=99568
https://ir.lib.nycu.edu.tw/handle/11536/88700

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研究計畫;;Research Plans