深次微米T型閘極金氧半電晶體之改良研製及其效應之研究
| dc.contributor.author | 黃調元 | en_US |
| dc.contributor.author | TIAO-YUANHUANG | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:28:51Z | |
| dc.date.available | 2014-12-13T10:28:51Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-037 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542052&docId=99568 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/88700 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 閘極漏電流 | zh_TW |
| dc.subject | 前非晶化佈植 | zh_TW |
| dc.subject | Gate leakage current | en_US |
| dc.subject | Preamorphization implant | en_US |
| dc.title | 深次微米T型閘極金氧半電晶體之改良研製及其效應之研究 | zh_TW |
| dc.title | Fabrication and Characterization of Deep-Submicron MOSFET with T-Gate Structure Using a Refined Process with Nitride/TEOS Stack Spacer | en_US |
| dc.type | Plan | en_US |