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Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling

Abstract

Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation. (c) 2008 Optical Society of America

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