Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling
| dc.citation.epage | 1328 | en_US |
| dc.citation.spage | 1327 | en_US |
| dc.contributor.author | Yen, H. H. | en_US |
| dc.contributor.author | Chiu, C. H. | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Kao, C. C. | en_US |
| dc.contributor.author | Lin, C. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.author | Yeh, W. Y. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:27Z | |
| dc.date.available | 2014-12-08T15:03:27Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation. (c) 2008 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-55752-859-9 | en_US |
| dc.identifier.journal | 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1996 | |
| dc.identifier.wosnumber | WOS:000260498400666 | |
| dc.language.iso | en_US | en_US |
| dc.title | Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling | en_US |
| dc.type | Proceedings Paper | en_US |
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