NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
| dc.citation.epage | 1431 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1430 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | PAN, CL | en_US |
| dc.contributor.author | WU, HH | en_US |
| dc.contributor.author | HSIEH, TR | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:12Z | |
| dc.date.available | 2014-12-08T15:05:12Z | |
| dc.date.issued | 1991-07-01 | en_US |
| dc.description.abstract | We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (lambda = 1.3-mu-m) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10(14) cm-3 for typical commerical wafers 350-mu-m in thickness. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3749 | |
| dc.identifier.wosnumber | WOS:A1991FY67200021 | |
| dc.language.iso | en_US | en_US |
| dc.title | NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M) | en_US |
| dc.type | Note | en_US |