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SHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODES

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dc.citation.epage284en_US
dc.citation.issue3en_US
dc.citation.spage283en_US
dc.citation.volume24en_US
dc.citation.woscount1
dc.contributor.authorCHANG, Len_US
dc.contributor.authorSU, Sen_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:07:12Z
dc.date.available2014-12-08T15:07:12Z
dc.date.issued1977en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5648
dc.identifier.wosnumberWOS:A1977CZ90700020
dc.language.isoen_USen_US
dc.titleSHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODESen_US
dc.typeLetteren_US

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